MgO doped Lithium Niobate wafer

The LiNbO3 (LN) crystal possesses stable physical, chemical, and mechanical properties, exhibiting high-temperature resistance, corrosion resistance, and ease of processing. It has a relatively high Curie temperature (Tο) with no phase transition from room temperature to Curie temperature, and it is resistant to depolarization, allowing for repeated use.

Moreover, when different types of ions are mixed into the LiNbO3 crystal, it exhibits various special properties, making it suitable for applications such as optical waveguide amplifiers, frequency-doubling converters, and optical storage media.

For example, in high-power laser applications, magnesium oxide-doped crystals (MgO:LiNbO3) are used.  They have a higher Laser Damage Threshold.  At the same time, the doping has no effect on the optical properties of the crystal.

CQT is capable of providing doped LN wafers: Er:LN, MgO:LN and Fe:LN with customized doping dose. We can also provide black reduced LN wafers in 3 inch, 4 inch, 6 inch for all cut angles! 

MgO Doped Lithium Niobate Wafer (MgO:LN) is a high-performance functional crystal material widely used in photonics and optoelectronics due to its excellent physical stability and outstanding optical characteristics. As a modified form of Lithium Niobate (LiNbO₃), MgO-doped wafers inherit all the intrinsic advantages of LN while significantly enhancing resistance to photorefractive damage, making them especially suitable for high-power and high-intensity laser applications.

Lithium Niobate itself is known for its stable physical, chemical, and mechanical properties, including high temperature resistance, strong corrosion resistance, and excellent machinability. It features a relatively high Curie temperature, maintaining a single crystal phase from room temperature up to the Curie point, which ensures long-term structural stability and reliable performance. In addition, LN exhibits strong resistance to depolarization, allowing repeated thermal and electrical cycling without degradation.

When magnesium oxide is doped into Lithium Niobate, the crystal’s laser damage threshold is significantly improved. This means MgO:LN wafers can withstand higher optical power densities compared to standard congruent LN, effectively reducing photorefractive effects such as beam distortion, refractive index change, and optical scattering. Importantly, this enhancement is achieved without compromising the intrinsic optical properties, including transparency, electro-optic coefficients, and nonlinear optical performance.

MgO Doped Lithium Niobate Wafers are widely used in applications such as high-power laser systems, electro-optic modulators, Q-switches, optical parametric oscillators, frequency doubling and mixing devices, and integrated optical waveguides. Their ability to maintain optical stability under strong light exposure makes them an ideal substrate for advanced photonic devices requiring long-term reliability and high optical efficiency.

In optical communication and integrated photonics, MgO:LN wafers are also valued for their excellent waveguide fabrication compatibility. They support various processing methods such as proton exchange, titanium diffusion, and dry etching, enabling the creation of low-loss optical waveguides and complex photonic circuits. This makes MgO-doped LN an important material for next-generation optical chips and photonic integration platforms.

CQT provides high-quality MgO Doped Lithium Niobate Wafers with customized doping concentrations to meet different application requirements. In addition to MgO:LN, CQT also offers Er:LN and Fe:LN wafers, as well as black reduced LN wafers. Wafer sizes are available in 3 inch, 4 inch, and 6 inch, and all standard and special cut angles can be supplied, including X-cut, Y-cut, Z-cut, and custom orientations.

With superior laser damage resistance, excellent optical performance, and flexible customization options, MgO Doped Lithium Niobate Wafer is an ideal choice for high-end photonic devices, nonlinear optics, laser engineering, and integrated optical systems. It plays a crucial role in improving device stability, extending service life, and enhancing overall system performance in demanding optical environments.