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    MgO doped Lithium Niobate wafer
    MgO doped Lithium Niobate waferMgO doped Lithium Niobate waferMgO doped Lithium Niobate wafer
    MgO doped Lithium Niobate waferMgO doped Lithium Niobate waferMgO doped Lithium Niobate wafer

    MgO doped Lithium Niobate wafer

    CQT is capable of providing doped LN wafers: Er:LN, MgO:LN and Fe:LN with customized doping dose. We can also provide black reduced LN wafers in 3 inch, 4 inch, 6 inch for all cut angles!

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    The LiNbO3 (LN) crystal possesses stable physical, chemical, and mechanical properties, exhibiting high-temperature resistance, corrosion resistance, and ease of processing. It has a relatively high Curie temperature (Tο) with no phase transition from room temperature to Curie temperature, and it is resistant to depolarization, allowing for repeated use.

    Moreover, when different types of ions are mixed into the LiNbO3 crystal, it exhibits various special properties, making it suitable for applications such as optical waveguide amplifiers, frequency-doubling converters, and optical storage media.

    For example, in high-power laser applications, magnesium oxide-doped crystals (MgO:LiNbO3) are used.  They have a higher Laser Damage Threshold.  At the same time, the doping has no effect on the optical properties of the crystal.

    CQT is capable of providing doped LN wafers: Er:LN, MgO:LN and Fe:LN with customized doping dose. We can also provide black reduced LN wafers in 3 inch, 4 inch, 6 inch for all cut angles! 



    Material

    3" 4" 6" LN wafer (Optical grade)

    Orientation

    X & Z

    Surface finish

    single or double sides polish (DLP/SLP/SSP/DSP all available )

    Thickness

    0.18/0.25/0.35/0.50/1.00 mm

    TTV

    <1~5µm

    BOW

    ± (25µm ~40um )

    Warp

    <= 35µm

    LTV (5mmx5mm)

    <1.5 um

    PLTV(<0.5um)

    ≥98% (5mm*5mm) with 2mm edge excluded

    Curie Temp

    1142°C±3°C

    Edge

    Compl't with SEMI M1.2@with GC800#. regular at C typed

    Orientation flats

    available, per request

    Doped with

    Er:LN, MgO:LN, Fe:LN, Er:MgO:LN

    Polished side Ra

    Roughness Ra<=5A

    Back Side Criteria

    Roughness Ra:0.5-1.0µm GC#1000

    Edge Rounding

    Compliant with SEMI M1.2 Standard/refer to IEC62276

    Cracks, saw marks, stains

    None

    Single Domain

    Completed Polarization/Reduced


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