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    Black Lithium Tantalate
    Black Lithium TantalateBlack Lithium Tantalate
    Black Lithium TantalateBlack Lithium Tantalate

    Black Lithium Tantalate

    To produce these reduction wafers, LiTaO3 crystals undergo chemical reduction in a controlled atmosphere. This process effectively eliminates the pyroelectric effect while maintaining the material's key properties such as Curie temperatures and piezoelectric characteristics.

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    Lithium Tantalate (LiTaO3) crystals are versatile materials with excellent piezoelectric, ferroelectric, acousto-optic, and electro-optic effects. They find wide applications in resonators, filters, transducers, high-frequency surface acoustic wave (SAW) devices, and bulk acoustic devices.

    Specifically, LiTaO3 is favored for both SAW and optical applications due to its substantial electromechanical coupling coefficient and low acoustic attenuation. Typical cut angles for SAW applications include 36°Y, 42°Y, and X-cut orientations. An innovative technology in LiTaO3 production involves reduction processes, resulting in "black" wafers that are devoid of pyroelectric discharge, ideal for high-frequency SAW applications.

    To produce these reduction wafers, LiTaO3 crystals undergo chemical reduction in a controlled atmosphere. This process effectively eliminates the pyroelectric effect while maintaining the material's key properties such as Curie temperatures and piezoelectric characteristics. The resulting black LiTaO3 wafers not only neutralize electrical charges but also exhibit considerable reduction in optical transmittance.

    These black LiTaO3 wafers offer distinct advantages, particularly in applications where pyroelectric discharge prevention and high-frequency operation are critical. They are essential in advanced SAW devices, contributing to improved performance and reliability in various technological applications.


    MaterialLiTaO3 wafers(White or Black 
    Curie Temp603±2℃
    Cutting AngleX/Y/Z/X112Y/Y36/Y42/Y48/etc
    Diameter/size3”/4”/6" LT wafer
    Tol(±)<0.20 mm
    Thickness0.18 ~ 0.5mm or more
    Primary Flat22mm /32mm /42.5mm /57.5mm
    LTV (5mmx5mm) <1µm
    TTV <3µm
    Bow-30<bow<30
    Warp<40µm
    PLTV(<0.5um)≥95%(5mm*5mm)
    Orientation FlatAll available
    Surface TypeSingle Side Polished /Double Sides Polished
    Polished side Ra<0.5nm
    Back Side CriteriaGeneral is 0.2-0.5µm or as customized
    Edge CriteriaR=0.2mm or Bullnose
    Wafer Surface CriteriaTransmissivitygeneral:5.9x10-11<s<2.0*10-10 at 25℃
    Contamination,None
    Particles ¢>0.3 µ  m<= 30
    Scratch , ChippingNone
    DefectNo edge cracks, scratches, saw marks, stains
    PackagingQty/Wafer box25pcs per box 


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