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Silicon substrates 3",4" 5" and 6" lapped /polished by ASTM Control |
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150mm Polished Silicon
Wafer
General Process

Material Properties
| ITEMS |
Characteristic |
ASTM Test Method |
| Type/Dopant |
P, Boron N, Phosphorous N, Antimony |
F42 |
| Orientations |
<100>, <111> |
F26 |
| Resistivity ranges |
|
F84 |
| - P, Boron |
0.001 - 50 ohm cm |
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| - N, Phosphorous |
0.1 - 40 ohm cm |
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| - N, Antimony |
0.005 - 0.025 ohm cm |
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| - N, Arsenic |
< 0.005 ohm cm |
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| Oxygen Content |
10-18ppma SEMI-STD or Custom |
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| Carbon Content |
0.5-1.0 ppma SEMI-STD or Custom |
F1391 |
Mechanical and Surface Properties
| Parameter |
Prime |
Monitor/
Test A |
Test B |
ASTM Method |
| Diameter |
150+/-0.5mm |
150+/-0.5mm |
150+/-0.5mm |
F613 |
| Thickness (µm) |
500+/-13um |
500+/-13um |
500+/-13um |
F533 |
| TTV (µm) |
< 6um |
< 8um |
< 15um |
F657 |
| Bow (µm) |
< 30um |
< 40um |
< 60um |
F657 |
| Wrap (µm) |
< 30um |
< 40um |
< 60um |
F657 |
| Contamination, Particles @ >0.3 µm |
<= 10 |
<= 30 |
<= 30 |
F523 |
| Primary/Secondary Flat |
SEMI-STD or Custom |
F671 |
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