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· Silicon substrates 3",4" 5" and 6" lapped /polished by ASTM Control
150mm Polished Silicon Wafer
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General Process


Material Properties
ITEMS Characteristic ASTM Test Method
Type/Dopant P, Boron N, Phosphorous N, Antimony F42
Orientations <100>, <111> F26
Resistivity ranges F84
- P, Boron 0.001 - 50 ohm cm
- N, Phosphorous 0.1 - 40 ohm cm
- N, Antimony 0.005 - 0.025 ohm cm
- N, Arsenic < 0.005 ohm cm
Oxygen Content 10-18ppma SEMI-STD or Custom
Carbon Content 0.5-1.0 ppma SEMI-STD or Custom F1391

Mechanical and Surface Properties
Parameter Prime Monitor/
Test A
Test B ASTM Method
Diameter 150+/-0.5mm 150+/-0.5mm 150+/-0.5mm F613
Thickness (µm) 500+/-13um 500+/-13um 500+/-13um F533
TTV (µm) < 6um < 8um < 15um F657
Bow (µm) < 30um < 40um < 60um F657
Wrap (µm) < 30um < 40um < 60um F657
Contamination, Particles @ >0.3 µm <= 10 <= 30 <= 30 F523
Primary/Secondary Flat SEMI-STD or Custom F671
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